An empirical rule for band offsets between III-V alloy compounds
- 1 August 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (3) , 2112-2113
- https://doi.org/10.1063/1.354734
Abstract
We present a method to empirically predict relative valence band positions of III-V semiconductor alloys. The method has been successfully applied to all the experimental data measured to date by the capacitance-voltage profiling technique.This publication has 15 references indexed in Scilit:
- Band-edge alignment in heterostructuresApplied Physics Letters, 1989
- Electrical properties and band offsets of InAs/AlSb n-N isotype heterojunctions grown on GaAsApplied Physics Letters, 1989
- Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling techniqueApplied Physics Letters, 1987
- Band discontinuities in GaAs/AlxGa1−xAs heterojunction photodiodesApplied Physics Letters, 1987
- Energy band alignment in GaAs:(Al,Ga)As heterostructuresSurface Science, 1986
- Band discontinuity for GaAs/AlGaAs heterojunction determined by C-V profiling techniqueJournal of Applied Physics, 1985
- Relationship between the conduction-band discontinuities and band-gap differences of InGaAsP/InP heterojunctionsApplied Physics Letters, 1984
- Theory of semiconductor heterojunctions: The role of quantum dipolesPhysical Review B, 1984
- Empirical rule to predict heterojunction band discontinuitiesJournal of Applied Physics, 1983
- Elementary theory of heterojunctionsJournal of Vacuum Science and Technology, 1977