Operation of strained-layer (In,Ga)As quantum welllasersprepared on (112)B GaAs substrate

17 March 1994

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 30 (6) , 497-499
https://doi.org/10.1049/el:19940328

Abstract

The operation of (In,Ga)As quantum well lasers prepared on [112]-oriented GaAs substrates is reported. Threshold current densities as low as 187 A/cm² for a 1.57 mm-long device have been obtained under pulsed-mode operation. The demonstration of laser action in a heterostructure grown on the [112]-oriented substrate is important for the design of blue-green light emitters.

Keywords

DESIGN
GAAS
THRESHOLD CURRENT DENSITIES
HETEROSTRUCTURE
[112]-ORIENTATION
STRAINED-LAYER (IN
GA)AS QUANTUM WELL LASERS
1.57 MM
BLUE-GREEN LIGHT EMITTERS
PULSED-MODE OPERATION
SECOND HARMONIC GENERATION
(112)B GAAS SUBSTRATE
LASER ACTION
INGAAS

This publication has 2 references indexed in Scilit:

Analysis of visible surface-emitting second-harmonic generators
Journal of Applied Physics, 1991
Surface-emitting second-harmonic generator for waveguide study
Applied Physics Letters, 1988