Photoluminescence Measurements of Low‐Level Oxygen in Thin Silicon Crystal Using a C‐O Complex Formed Through Carbon Implantation

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Abstract
A method for measuring low‐level oxygen concentration in thin silicon crystals by photoluminescence (PL) is investigated using a radiative carbon‐oxygen complex (C center: 0.79 eV) formed by supplementing carbon‐lean silicon crystal with carbon through carbon implantation. Oxygen concentrations between and in thin crystal (<1μm) can be determined by measuring photoluminescence intensity of the C center in as‐implanted samples implanted at fluences between and of carbon. Although the possibility of detecting very low oxygen concentrations is seen for a thick sample prepared through the sequence of implanting carbon annealing at high temperatures ∼1000°C, and irradiating with , diffusion of the elements due to the high temperature annealing makes the preparation unsuitable for the quantitative measurements of oxygen concentrations in a thin crystal of micrometer thickness.

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