Scanning Capacitance Microscopy of Dopants in III-V Semiconductors
- 2 July 1998
- journal article
- Published by Oxford University Press (OUP) in Microscopy and Microanalysis
- Vol. 4 (S2) , 640-641
- https://doi.org/10.1017/s1431927600023321
Abstract
Scanning Capacitance Microscopy (SCM) was first developed in 1985 as a method for sensing tip-to-sample spacing for surface topography profiling in connection with the RCA VideoDisc. Williams and coworkers were the first to use an SCM for obtaining dC/dV doping profiles in semiconductors, albeit with a rather modest resolution of 200 nm. More recently, it has been developed as a 50-nmresolution tool for microscopic doping analysis of semiconductors by measuring the tip-to-sample rf capacitance in an AFM controlled by other means, e.g. by laser beam deflection of a cantilever tip. In this paper we report on the application of SCM to study the 2D doping profiles of InP-based devices, such as multi-quantum well lasers.It is particularly convenient to prepare cross sections of III-V devices, since the material readily cleaves on [110] planes, as compared to silicon where cross sections must be obtained by painstaking polishing.Keywords
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