Ultrashallow p+-n junctions formed by diffusion from an RTCVD-deposited B:Ge layer
- 15 February 1994
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 122-131
- https://doi.org/10.1117/12.167333
Abstract
The rapid thermal chemical vapor deposition of heavily boron-doped Ge layers on silicon substrates is characterized and optimized for the purpose of ultrashallow junction applications. Incorporation of a very high concentration of boron in the Ge layer is observed with a moderate flow rate (2 - 20 sccm) of 1% B2H6 in hydrogen. The surface coverage of the B:Ge layer depends strongly on the B2H6 flow rate, favoring higher content of boron for better coverage. The substrate temperature during deposition also shows a strong effect on the film morphology with 550 degree(s)C yielding the most uniform surface.Keywords
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