A true single-transistor oxide-nitride-oxide EEPROM device
- 1 March 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 8 (3) , 93-95
- https://doi.org/10.1109/edl.1987.26563
Abstract
A novel single-transistor EEPROM device using single-polysilicon technology is described. This memory is programmed by channel hot-electron injection and the charges are stored in the oxide-nitride-oxide (ONO) gate dielectric. Erasing is accomplished in milliseconds by applying a positive voltage to the drain plus an optional negative voltage to the gate causing electron tunneling and/or hot-hole injection due to the deep-depletion-mode drain breakdown. Since the injection and storage of electrons and holes are confined to a short region near the drain, the part of the channel near the source maintains the original positive threshold voltage even after repeated erase operation. Therefore a select transistor, separate or integral, is not needed. Because oxide layers with a thickness larger than 60 Å are used, this device has much better data retention characteristics than conventional MNOS memory cells. This device has been successfully tested for WRITE/ERASE endurance to 10000 cycles.Keywords
This publication has 5 references indexed in Scilit:
- A source-side injection erasable programmable read-only-memory (SI-EPROM) deviceIEEE Electron Device Letters, 1986
- A hot-hole erasable memory cellIEEE Electron Device Letters, 1986
- MOSFET drain breakdown voltageIEEE Electron Device Letters, 1986
- A new flash E2PROM cell using triple polysilicon technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Discharging process by multiple tunnelings in thin-oxide MNOS structuresIEEE Transactions on Electron Devices, 1982