Some properties of alloyed-junction (p-n)-(l-h) germanium diodes
- 31 December 1964
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 7 (12) , 933-934
- https://doi.org/10.1016/0038-1101(64)90072-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- On Carrier Accumulation, and the Properties of Certain Semiconductor Junctions†Journal of Electronics and Control, 1958
- Minority Carrier Extraction in GermaniumPhysical Review B, 1955
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949