Use of molecular beam epitaxy for the achievement of low resistance intercell contacts in multiband gap solar cells

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Abstract
GaAs and Ga1−xAlxAs n+/p+ tunnel junctions have been grown by MBE. The peak current density and the resistance-area product are 2.35×102 A cm−2 and 6×10−4 Ω cm2, respectively, in GaAs. These tunnel junctions provide suitable connections for a cascade solar cell with a power loss lower than 0.65% at 1000 suns AM 1.5 (83.5 W cm−2). Tunnel diodes have been obtained in Ga1−xAlxAs for x<0.2 only. For alloys with band gaps in the range 1.78 eV(x = 0.26)–1.85 eV(x = 0.31), the diodes show backward and rectifying I–V characteristics, respectively.

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