Soft Contact Deposition onto Molecularly Modified GaAs. Thin Metal Film Flotation: Principles and Electrical Effects

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Abstract
We describe and analyze a process to position a ∼ 1 nm thick molecular layer between two solid surfaces without damage to the molecules. The method is used to deposit a metal film in a soft, gentle manner on a semiconductor, yielding functional semiconductor/molecule/metal junctions. It is a combination of the lift‐off procedure, known from, for example, lithography, and the bonding process, known from, for example, wafer bonding. The combined method may find application also outside the area described here. We point out its major difficulties as well as solutions to overcome them. For this we rely on concepts from the physics of liquid and solid surfaces and interfaces. Conditions are found, in terms of choice of solvents, under which the method will be effective. The efficacy of floatation as a soft contacting procedure is demonstrated by the preparation of Au and Al contacts on GaAs single crystal surfaces, modified by a self‐assembled monolayer of small organic molecules. The resulting electrical properties of the contacts depend crucially on how the molecular interface with the contacting metal is formed. This type of wet contacting procedure to make dry devices may be advantageous especially if biomolecules are used.