Submicron InP-InGaAs single heterojunction bipolar transistors with f/sub T/ of 377 GHz
- 9 July 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 24 (5) , 292-294
- https://doi.org/10.1109/led.2003.812530
Abstract
Submicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve record-breaking speed performance using an aggressively scaled epitaxial structure coupled with a submicron emitter process. SHBTs with dimensions of 0.35 ×16 μm have demonstrated a maximum current gain cutoff frequency f T of 377 GHz with a simultaneous maximum power gain cutoff frequency f max of 230 GHz at the current density Jc of 650 kA/cm 2 . Typical BV/sub CEO/ values exceed 3.7 V.Keywords
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