The application of numerical methods to simulate the liquid phase epitaxial growth of Ga1 −xAlxAs from an unstirred solution
- 30 September 1972
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 15 (4) , 268-274
- https://doi.org/10.1016/0022-0248(72)90021-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Computer simulations of liquid phase epitaxy of GaAs in Ga solutionJournal of Crystal Growth, 1971
- Liquid Epitaxial Growth of GaAsSb and Its Use as a High-Efficiency, Long-Wavelength Threshold PhotoemitterJournal of Applied Physics, 1970
- Calculation of iii–v ternary phase diagrams: In-Ga-As and In-As-SbJournal of Physics and Chemistry of Solids, 1969
- Ga-Al-As: Phase, thermodynamic and optical propertiesJournal of Physics and Chemistry of Solids, 1969
- Crystal Growth of GaAs from Ga by a Traveling Solvent MethodJournal of Applied Physics, 1963