Variation in misfit dislocation behavior as a function of strain in the GeSi/Si system
- 6 March 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (10) , 925-927
- https://doi.org/10.1063/1.100810
Abstract
We show how strained-layer relaxation via misfit dislocation introduction varies significantly in GexSi1−x/Si (100) epitaxy as a function of the strain in this system. It is found that for samples grown by molecular beam epitaxy at a substrate temperature of 550 °C, structures with lower strain (x=0.15) are highly metastable, relaxing most of their excess stress on annealing to temperatures ∼650–750 °C. Structures with higher strain (x=0.25) are observed to relax far more gradually over the temperature range 550–900 °C. In situ electron microscope observations explain this behavior in terms of misfit dislocation interactions in the relaxing material.Keywords
This publication has 2 references indexed in Scilit:
- I n s i t u observations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructuresApplied Physics Letters, 1988
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974