Schottky-barrier height of Au/p-InGaAsP alloys lattice-matched to InP
- 1 July 1976
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science and Technology
- Vol. 13 (4) , 874-875
- https://doi.org/10.1116/1.569009
Abstract
The barrier heights of Au/p-InGaAsP alloys lattice-matched to InP substrates are measured by the photoelectric technique. The composition dependence of the barrier height varies smoothly from 0.77 eV for p-InP to 0.50 eV for p-InGaAs. The data are consistent with a barrier height dependence on the As/P anion ratio only.This publication has 0 references indexed in Scilit: