A 2—18-GHz monolithic distributed amplifier using dual-gate GaAs FET's

1 December 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 31 (12) , 1926-1930
https://doi.org/10.1109/T-ED.1984.21820

Abstract

This paper describes a 2-18-GHz monolithic distributed amplifier with over 6-dB gain, ± 0.5-dB gain flatness, and less than 2.0:1 VSWR. Measured noise figure is below 7.5 dB, and power output capability is greater than 17 dBm, The amplifier is designed with dual-gate GaAs FET's instead of single-gate FET's for maximum gain over the design bandwidth. Cascaded amplifier performance will also be presented.

Keywords

DISTRIBUTED AMPLIFIERS
BANDWIDTH
EQUIVALENT CIRCUIT
FIELD EFFECT TRANSISTOR
FREQUENCY RESPONSE
TRANSMISSION LINE THEORY
IMPEDANCE
RADIO FREQUENCY
EQUIVALENT CIRCUITS
NOISE MEASUREMENT
GALLIUM ARSENIDE

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