The development of millimetre wave mixer diodes

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Abstract
A new format gallium arsenide beam lead diode has been developed which allows the total capacitance to be reduced sufficiently for applications throughout the millimetre waveband. The design involves the use of low melting point glass and has high mechanical strength for ease of handling. Metal-organic chemical vapour deposition has been used to provide the thin epitaxial layer required to minimize series resistance in the device. Typical measurements from many batches are total capacitance at zero bias 003 pF, including 002 pF stray capacitance, series resistance 6Ω and breaking force 4.5 g. The millimetre wave performance of the diodes has been demonstrated in microstrip mixer circuits operating at 90 GHz and 140 GHz. The microstrip single-ended mixer at 140 GHz extends the technology already established up to 100 GHz and includes a single crystal quartz substrate. The conversion loss of balanced mixers at 90 GHz is typically 6.5 dB and the single-ended mixer at 140 GHz displayed a loss of 7.0 dB.

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