Investigation of deep-depletion régime of m.o.s. structures using ramp-response method

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Abstract
A method is proposed for obtaining the capacitance/voltage characteristics of m.o.s. structures in the deep-depletion régime. The method is based on the current response of the m.o.s. capacitor to a linear ramp voltage. The theory of the method is briefly presented. Experimental results are included. The method is specifically applicable for surface breakdown studies.