Low threshold 0.98 μm aluminium-free strained-quantum-well InGaAs/InGaAsP/InGaP lasers
- 7 January 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (1) , 1-2
- https://doi.org/10.1049/el:19930001
Abstract
Aluminium-free strained-quantum-well In0.2Ga0.8As lasers employing novel two-stepped InGaAsP confinement layers and InGaP cladding layers on a GaAs substrate are demonstrated for the first time. Threshold current density as low as 58 A/cm2 is obtained with broad stripe lasers. This threshold current density is, to the authors' knowledge, the lowest reported for 0.98 μm lasers grown by organic chemical vapour deposition.Keywords
This publication has 1 reference indexed in Scilit:
- High power CW operation of aluminium-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990