Selective area oxidation of with an ambient scanning tunneling microscope
- 1 June 1996
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 7 (2) , 106-109
- https://doi.org/10.1088/0957-4484/7/2/002
Abstract
A scanning tunneling microscope tip has been used to selectively write oxidation patterns on a thin film on silicon. After etching the patterns in hydrofluoric acid, trenches are observed, consistent with silicon consumption in the oxidation process. The patterns in the nitride film could be transferred to the underlying silicon with an ammonium fluoride etch.Keywords
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