A high-temperature deformation stage for X-ray synchrotron topography. Applications to dislocation mechanisms in silicon
- 1 August 1982
- journal article
- research article
- Published by International Union of Crystallography (IUCr) in Journal of Applied Crystallography
- Vol. 15 (4) , 412-416
- https://doi.org/10.1107/s002188988201228x
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