BEHIND THE QUANTUM CONFINEMENT AND SURFACE PASSIVATION OF NANOCLUSTERS
- 1 April 1999
- journal article
- Published by World Scientific Pub Co Pte Ltd in Surface Review and Letters
- Vol. 6 (2) , 171-176
- https://doi.org/10.1142/s0218625x99000196
Abstract
A new model is presented to describe the quantum confinement and surface passivation effects of nanoclusters. The quantum well depth (ϕ) and the band gap width (Eg) of nanoclusters are independent concepts, because the ϕ depends on the surface electron density while the Eg is a function of the crystal field of the solid. The ϕ and Eg can be correlated with the joint physical and chemical effects, which are quite simple but have rarely been noticed. It is suggested that the bond contraction at the surface and the rise in the surface-to-volume ratio (γ), as well as the cluster interaction, enhance intrinsically the crystal field and hence the band gap Eg. Reaction with electronegative elements, such as oxygen and nitrogen, widens extrinsically the Eg by producing holes below the Fermi level [Appl. Phys. Lett.72, 1706 (1998)]. The formulation agrees well with experimental observations on the band gap enlargement by reducing particle size.Keywords
This publication has 26 references indexed in Scilit:
- Effect of irradiant wavelength during porous silicon formationApplied Physics Letters, 1997
- Luminescence from plasma deposited silicon filmsJournal of Applied Physics, 1997
- A comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powderApplied Physics Letters, 1996
- STM light emission spectra of individual nanostructures of porous SiSurface Science, 1996
- Experimental evidence for luminescence from silicon oxide layers in oxidized porous siliconPhysical Review B, 1996
- ClustersScience, 1996
- Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous SiPhysical Review B, 1995
- Luminescence of spark-processed materialsThin Solid Films, 1995
- Mechanism of the visible luminescence in porous siliconSolid State Communications, 1993
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990