High-power AlGaInP three-ridge type laser diode array
- 17 March 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (6) , 326-327
- https://doi.org/10.1049/el:19880220
Abstract
A three ridge type GaInP/AlGaInP visible light emitting laser diode array grown by AP-OMVPE has been achieved. A pulsed maximum output power of 108 mW is obtained from this laser array without the use of facet coatings. The pulsed threshold current is 290 mA and the external differential efficiency is 0.75 W/A.Keywords
This publication has 1 reference indexed in Scilit:
- HETEROSTRUCTURE MATERIALSPublished by Elsevier ,1978