GaAs/AlGaAs heterojunction MISFET's having 1-W/mm power density at 18.5 GHz

1 November 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (11) , 638-639
https://doi.org/10.1109/EDL.1986.26502

Abstract

The previously reported GaAs/AlGaAs heterojunction MISFET with an undoped AlGaAs layer as an insulator has been further optimized for power operation at upper Ku band. A 300-µm gate-width device generated 320 mW of output power with 33-percent efficiency at 18.5 GHz. The corresponding power density exceeds 1 W/mm. When optimized for efficiency, the device has achieved a power added efficiency of 43 percent at 19 GHz.

Keywords

GALLIUM ARSENIDE
HETEROJUNCTIONS
MISFETS
IMPEDANCE
MESFETS
FREQUENCY
BREAKDOWN VOLTAGE
POWER GENERATION
ELECTRON DEVICES
FETS