Diamagnetic Susceptibility of Tetrahedral Semiconductors

The lattice contribution to the diamagnetic susceptibility, ${\chi }_L$, is written as a sum of three terms, a core term ${\chi }_c$, a Langevin-like valence-electron contribution ${\chi }_v$, and a Van Vleck paramagnetic term ${\chi }_p$ using a one-oxcillator model. Measurements of ${\chi }_L$ and $\frac{d{\chi }_L}{\mathrm{dT}}$ for diamond, Si, Ge, GaAs, and GaP are presented. The model allows a separate determination of each of the three terms and relates these terms to the symmetry and extent of the valence-bond charge distribution.