Switching and Temperature Effects in Lateral Films of Amorphous Silicon
- 3 August 1970
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 25 (5) , 292-296
- https://doi.org/10.1103/physrevlett.25.292
Abstract
Self-heating in films of amorphous silicon prior to switching results from application of voltage pulses producing lateral currents. A smooth, rapid, and highly localized temperature rise always precedes the switching event resulting in a filamentary formation bridging the gap. The negative electrode edge is hotter than the positive electrode edge, and the measured filament temperatures compare favorably with temperatures calculated assuming intrinsic conduction takes place in the confined dimensions of the filament channel.Keywords
This publication has 5 references indexed in Scilit:
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