Determining intrinsic noise parameters of 0.25 μm gate pseudomorphic HEMT

10 October 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (21) , 1923-1924
https://doi.org/10.1049/el:19911194

Abstract

An accurate equivalent circuit of a pseudomorphic HEMT (PM-HEMT) has been used, together with physically realistic values for the intrinsic PM-HEMT noise parameters (P, R and C, to estimate the extrinsic noise parameters (minimum noise figure, optimum noise impedance, etc.) of a 0.25 μm gate PM-HEMT. It is demonstrated that good agreement with experiment can be obtained for the minimum noise figure, optimum noise impedance, and also noise resistance, over the frequency range 6–18 GHz.

Keywords

6 TO 18 GHZ
OPTIMUM NOISE IMPEDANCE
EXTRINSIC NOISE PARAMETERS
INTRINSIC NOISE PARAMETERS
EQUIVALENT CIRCUIT
MINIMUM NOISE FIGURE
0.25 MICRON
PSEUDOMORPHIC HEMT
NOISE RESISTANCE
NOISE MODEL
GATE LENGTH

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