Recombination centres and traps in ZnIn2S4
- 31 January 1975
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 9 (6) , 514-522
- https://doi.org/10.1016/0022-2313(75)90065-4
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Optical properties of a ‘quasi-disordered’ semiconductor: ZnIn2S4Solid State Communications, 1973
- Charge storage in ZnIn2S4 single crystalsApplied Physics Letters, 1973
- Electric field variation of photoconductivity quenching due to hot electron capture in ZnIn2S4Physica Status Solidi (a), 1972
- Properties of the Ternary Compound ZnIn2S4 at High Electric FieldJournal of Applied Physics, 1971
- The thermally stimulated luminescence and conductivity of insulatorsJournal of Physics C: Solid State Physics, 1969
- Photoconductivity Decay in Imperfect CrystalsJournal of Applied Physics, 1967
- Further Considerations on a Theory of Superlinearity in CdS and Related MaterialsJournal of Applied Physics, 1966
- Critical Comment on a Method for Determining Electron Trap DepthsJournal of the Optical Society of America, 1957
- New Observations on Superlinear Luminescence*,†Journal of the Optical Society of America, 1949
- Phosphorescence and electron traps II. The interpretation of long-period phosphorescenceProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1945