Positron-annihilation study of voids ina-Si anda-Si:H
- 15 April 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (8) , 5924-5927
- https://doi.org/10.1103/physrevb.33.5924
Abstract
Angular correlation of positron-electron annihilation radiation (ACAR) experiments and positron-lifetime measurements have been performed in a-Si and a-Si:H films as a function of temperature. Positronium formation in microvoids is observed in a-Si:H, but not in a-Si. From the width of the narrow positronium ACAR components we estimate the average diameter of the microvoids to be ∼20 Å. A complex temperature dependence of the positron and positronium lifetimes is obtained and is discussed in terms of temperature-dependent positron trapping in various sites and in terms of hydrogen detrapping from dangling bonds.Keywords
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