Nanosecond four-wave mixing in semi-insulating GaAs
- 1 April 1992
- journal article
- Published by Elsevier in Optics Communications
- Vol. 88 (4-6) , 559-568
- https://doi.org/10.1016/0030-4018(92)90084-5
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Free-carrier-induced third-order optical nonlinearities in semiconductorsJournal of the Optical Society of America B, 1989
- Theory of transient energy transfer in gallium arsenideIEEE Journal of Quantum Electronics, 1988
- Experimental requirements for quantitative mapping of midgap flaw concentration in semi-insulating GaAs wafers by measurement of near-infrared transmittanceJournal of Applied Physics, 1985
- Optical limiting in GaAsIEEE Journal of Quantum Electronics, 1985
- Optical assessment of the main electron trap in bulk semi-insulating GaAsApplied Physics Letters, 1981
- Deep-level optical spectroscopy in GaAsPhysical Review B, 1981
- Optical phase conjugation in Hg_1 −xCdxTeOptics Letters, 1980
- SEARCH FOR RESONANCE BEHAVIOR IN THE MICROWAVE DIELECTRIC CONSTANT OF GaAsApplied Physics Letters, 1967
- Theory of Optical Mixing by Mobile Carriers in SemiconductorsPhysical Review Letters, 1966
- Infrared Absorption and Electron Effective Mass in-Type Gallium ArsenidePhysical Review B, 1959