Magnetoresistance mobility profiling of MESFET channels

1 December 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 27 (12) , 2277-2281
https://doi.org/10.1109/t-ed.1980.20265

Abstract

Magnetoresistance provides an alternative, nondestructive technique for determining the carrier mobility in the conducting channel of field-effect transistors (FET's) over their full range of operation. The analysis is well suited to the typical FET geometry. The technique is illustrated here by a comparative study of GaAs depletion-mode FET devices.

Keywords

MOBILITY
MAGNETORESISTANCE
MESFET
ILLUSTRATED
SUITED
NONDESTRUCTIVE
GEOMETRY
TRANSISTORS
DEPLETION
GAAS