Laser enhanced metalorganic chemical vapor deposition crystal growth in GaAs
- 15 July 1985
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (2) , 95-96
- https://doi.org/10.1063/1.96208
Abstract
An enhanced crystal growth of GaAs is observed in metalorganic chemical vapor deposition (MOCVD) under laser illumination. It is difficult to understand this enhancement effect only by a pyrolitic effect and we should consider photochemical processes like photoassisted catalytic or surface effect. This laser enhancement makes patterned crystal growth in MOCVD possible.Keywords
This publication has 3 references indexed in Scilit:
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- Reaction of C2H4 with photo-formed O− hole centers on supported MoO3Journal of Catalysis, 1982
- A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxyJournal of Crystal Growth, 1981