LEED and AES characterization of the GaAs(110)–ZnSe interface

Publisher Website
Google Scholar
Abstract
In this paper, we study the composition and structure of epitaxialZnSefilmsgrown by congruent evaporation on GaAs(110) at a rate of 2 Å/min. We find that the filmsgrown on 300 °C GaAs are nearly stoichiometric and form an abrupt interface with the substrate. Filmsgrown at higher temperature (T>350–400 °C) are Se rich. The crystallinity of filmsgrown at 300 °C is good and their surface atomic geometry is identical to that of a ZnSe crystal. The GaAs–ZnSe interface geometry seems to be dominated by the Se–substrate bonds. The adsorption of Se, during the formation of very thin ZnSefilms (2–3 Å), produces a (1×2) LEED pattern and modifications of the LEEDI–V profiles, which probably indicate a change in the substrate atomic relaxation.

This publication has 0 references indexed in Scilit: