Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxy

• 1 March 1995
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
• Vol. 13  (2) , 664-666
• https://doi.org/10.1116/1.587936

Abstract

Keywords

• SELECTIVE AREA
• GAAS
• AREA EPITAXY
• CARBON DOPED
• CHEMICAL BEAM