On the Spectral Intensity Distribution of Donor–Acceptor Pair Recombination in GaP
- 1 November 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 66 (1) , 133-143
- https://doi.org/10.1002/pssb.2220660114
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Binding of an exciton to a donor‐acceptor pair in a semiconductor ii. binding energy and critical separation in the case of a coulomb interaction – influence of the polarization effectsPhysica Status Solidi (b), 1973
- Binding of an exciton to a donor‐acceptor pair in a semiconductor. I. Critical binding in the case of a Coulomb interactionPhysica Status Solidi (b), 1973
- Energy States of Isolated Donor–Acceptor Pairs and the Influence of Polarization Interaction on the Pair EnergyPhysica Status Solidi (b), 1973
- Configuration Interaction in Donor-Acceptor PairsPhysical Review B, 1972
- Radiative Recombination in Cadmium SulfideCanadian Journal of Physics, 1972
- Radiative recombination rate of donor–acceptor pairsCanadian Journal of Physics, 1969
- Kinetics of Radiative Recombination at Randomly Distributed Donors and AcceptorsPhysical Review B, 1965
- Pair Spectra in GaPPhysical Review Letters, 1963
- Theory of the energy levels of donor-acceptor pairsJournal of Physics and Chemistry of Solids, 1960
- Chemical Interactions Among Defects in Germanium and SiliconBell System Technical Journal, 1956