Preparation of MgIn2O4-X Thin Films on Glass Substrate by RF Sputtering
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9A) , L1260-1262
- https://doi.org/10.1143/jjap.32.l1260
Abstract
MgIn2O4-X thin films were deposited onto a silica glass plate by the RF sputtering method. The highest conductivity observed for the film post-annealed under H2 flow was 2.3×102 S/cm, with a carrier concentration of 6.3×1020 cm-3 and a mobility of 2.2 cm2·V-1·s-1. No distinct optical absorption band was observed in the visible region.Keywords
This publication has 2 references indexed in Scilit:
- New oxide phase with wide band gap and high electroconductivity CdGa2O4 spinelApplied Physics Letters, 1993
- New oxide phase with wide band gap and high electroconductivity, MgIn2O4Applied Physics Letters, 1992