A single p-i-n junction amorphous-silicon solar cell with conversion efficiency of 12.65%
- 1 August 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (8) , 460-461
- https://doi.org/10.1109/55.119165
Abstract
A conversion efficiency of 12.65% was obtained at AM-1.5, 100 mW/cm/sup 2/ for a single p-i-n junction amorphous-Si solar cell of 1.05 cm/sup 2/, with a glass/SnO/sub 2//p-i-n/back-electrode structure. The solar cell had a short-circuit current of 19.13 mA/cm/sup 2/, an open-circuit voltage of 0.885 V, and a fill factor of 74.7%. The reason why the efficiency of the produced solar cell was enhanced by hot-annealing treatment is considered to be due to the reduction of the minute leaks caused by the pinhole treatment and the reduction of the number of pinholes by reverse-bias annealing treatment. It is believed that because of the minute irregularities on the surface of SnO/sub 2/, the diffuse light in the solar cell increased the effective optical length in the i layer. Therefore the collection efficiency in the long-wavelength region was enhanced.<>Keywords
This publication has 2 references indexed in Scilit:
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