Effect of polysilicon depletion on MOSFET I–V characteristics
- 24 June 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (13) , 1208-1209
- https://doi.org/10.1049/el:19930807
Abstract
MOSFET current (IDS) degradation as a function of polysilicon gate concentration (Np) and gate oxide thickness (tox) is demonstrated using measured and simulated results. It is found that as the oxide thickness and/or polysilicon gate concentration decrease, the I–V degradation becomes more pronounced. Experimental data show that as Np decreases from 1.6 × 1019 cm−3 to 5 × 1018 cm−3 for a device with tox ≃ 7 nm, the drain current IDS decreases approximately 14% at | VGS − VTH | = 2 V and | VDS | = 2.5 V. The measured data are in general agreement with the theoretical results based on a modified Pao–Sah model that takes into account the polysilicon depletion effect.Keywords
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- Doping of n/sup +/ and p/sup +/ polysilicon in a dual-gate CMOS processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003