Fast silicon p doped low temperature bolometer
- 1 December 1984
- journal article
- Published by Elsevier in Cryogenics
- Vol. 24 (12) , 681-683
- https://doi.org/10.1016/0011-2275(84)90038-9
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Effect on electrical properties of segregation of implanted P+ at defect sites in SiApplied Physics Letters, 1980
- Variable range hopping conduction in the lowest temperature regionSolid State Communications, 1979
- Notizen: A Superconducting Bolometer as a High Sensitivity Detector for Molecular BeamsZeitschrift für Naturforschung A, 1969
- Low-Temperature Germanium BolometerJournal of the Optical Society of America, 1961
- The General Theory of Bolometer PerformanceJournal of the Optical Society of America, 1953