A ferroelectric DRAM cell for high density NVRAMs

Publisher Website

1 January 1990

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/vlsit.1990.110985

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

An experimental 512-bit nonvolatile memory with ferroelectric storage cell
IEEE Journal of Solid-State Circuits, 1988
Yttrium oxide/silicon dioxide: a new dielectric structure for VLSI/ULSI circuits
IEEE Electron Device Letters, 1988
Thin-film ferroelectrics of PZT of sol-gel processing
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 1988