P-N JUNCTION FORMATION IN ION-IMPLANTED ZnTe
- 15 October 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (8) , 352-354
- https://doi.org/10.1063/1.1653431
Abstract
Chlorine ion implantation in ZnTe gives a highly resistive n‐type layer. We describe the technological process used for the doping, as well as the different tests which allowed us to conclude that the type conversion of ZnTe was accomplished.Keywords
This publication has 3 references indexed in Scilit:
- TYPE CONVERSION AND p-n JUNCTION FORMATION IN ION-IMPLANTED ZnTeApplied Physics Letters, 1969
- Ion implantation in semiconductors—Part I: Range distribution theory and experimentsProceedings of the IEEE, 1968
- Carrier Mobility and Shallow Impurity States in ZnSe and ZnTePhysical Review B, 1963