Particle detectors based on semi-insulating silicon carbide
- 14 August 1999
- journal article
- Published by Elsevier in Nuclear Physics B - Proceedings Supplements
- Vol. 78 (1-3) , 516-520
- https://doi.org/10.1016/s0920-5632(99)00596-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Room-temperature compound semiconductor radiation detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1997
- Band gap states of Ti, V, and Cr in 4H–silicon carbideApplied Physics Letters, 1997
- SiC Seeded Crystal GrowthPhysica Status Solidi (b), 1997
- First measurements with a diamond microstrip detectorNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1995
- Investigation of Deep Levels and Residual Impurities in Sublimation-Grown SiC SubstratesJapanese Journal of Applied Physics, 1994
- Thermal oxidation and electrical properties of silicon carbide metal-oxide-semiconductor structuresJournal of Applied Physics, 1993
- Contact resistance measurements on p-type 6H-SiCApplied Physics Letters, 1993
- Recent developments in SiC single-crystal electronicsSemiconductor Science and Technology, 1992