An Intrinsic Model for Radiative Recombination in Porous Silicon
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
A microcrystalline model for the light emitting portion of porous silicon is outlined. Confinement to a short length scale induces an effective direct dipole matrix element for radiative recombination. The radiative recombination time is strongly size (hence confinement induced energy shift) dependent, and in the microsecond regime for blue shifts of ˜1 eV. Trends and comparison to experiment are discussed.Keywords
This publication has 4 references indexed in Scilit:
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991
- Electroluminescence in the visible range during anodic oxidation of porous silicon filmsApplied Physics Letters, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990