Effects of wavelength, deposition rate and thickness on laser ablation deposited YSZ films on Si(100)
- 1 July 1997
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 304 (1-2) , 225-228
- https://doi.org/10.1016/s0040-6090(97)00201-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- ArF and KrF excimer laser deposition of yttria-stabilized zirconia on Si(100)Applied Physics Letters, 1996
- Heteroepitaxial Growth of Yttria-Stabilized Zirconia Film on Silicon by Reactive SputteringJapanese Journal of Applied Physics, 1995
- YBa2Cu3O7−δ films on Si with Y-stabilized ZrO2 and Y2O3 buffer layers: High-resolution electron microscopy of the interfacesApplied Physics Letters, 1992
- Epitaxial growth of monoclinic and cubic ZrO2 on Si(100) without prior removal of the native SiO2Thin Solid Films, 1992
- Preparation and growth of YSZ buffer layers and YBa2Cu3O7 - films on silicon (100)Physica C: Superconductivity and its Applications, 1991
- Epitaxial yttria-stabilized zirconia on hydrogen-terminated Si by pulsed laser depositionApplied Physics Letters, 1990