GaInNAs/GaAs multiple quantum-wells (MQWs) for 1.3 μm laser applications

Publisher Website

7 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iciprm.2000.850353

Abstract

No abstract available

Keywords

This publication has 5 references indexed in Scilit:

Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes
IEEE Photonics Technology Letters, 2000
High-performance long-wavelength (/spl lambda//spl sim/1.3 μm) InGaAsPN quantum-well lasers
IEEE Photonics Technology Letters, 1999
1.3 µm continuous-wave operation of GainNAslasers grown by metal organicchemical vapour deposition
Electronics Letters, 1999
Reduced threshold current densities of (GaIn)(NAs)/GaAssingle quantum welllasers for emission wavelengths in the range 1.28 – 1.38 µm
Electronics Letters, 1999
GaInNAs: a novel material for long-wavelength semiconductor lasers
IEEE Journal of Selected Topics in Quantum Electronics, 1997