A novel Al-Sc (scandium) alloy for future LSI interconnection
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 277-280
- https://doi.org/10.1109/iedm.1991.235449
Abstract
A new aluminum alloy, Al-Sc (scandium), has been studied in comparison with a conventional Al-Si-Cu alloy for future LSI interconnection. It has been found that Sc addition into Al completely suppressed a failure caused by a stress-induced migration phenomenon (SM) in submicron lines and hillock generation, while showing superior electromigration (EM) performance to conventional Cu addition. The new impurity, Sc, precipitates and presumably acts as a sink site for vacancies, which are the origin of the degradation in reliability by SM and EM.<>Keywords
This publication has 2 references indexed in Scilit:
- The effect of solution treatment on the ageing processes of Al—Sc alloysCrystal Research and Technology, 1984
- Reduction of Electromigration in Aluminum Films by Copper DopingIBM Journal of Research and Development, 1970