Maximum electric field in high-field domain
- 3 August 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (16) , 521-522
- https://doi.org/10.1049/el:19780350
Abstract
A simple formula relating the domain voltage to the maximum domain field and device parameters is derived. The results are used to analyse the limitations of the parameters of GaAs and InP transferred-electron devices related to the impact ionisation within a high-field domain.Keywords
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