Exciton Recombination Radiation of GaAs: Zn

The identification of recombination radiation from excitons bound to ionized- and neutral-zinc centers has been confirmed, and the energy of these radiations has been found to be independent of Zn concentration up to ≈ ${10}^{16}$ acceptors/cc. Comparison with theory leads to an electron-to-hole effective-mass ratio for exciton considerations in GaAs of 0.28. For more heavily Zn-doped GaAs, the photoluminescence changes character, indicating that the nonlocalized state is involved.