Reduction of the storage time of a transistor using a Schottky-barrier diode
- 1 January 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 55 (11) , 2064-2065
- https://doi.org/10.1109/PROC.1967.6076
Abstract
A composite transistor consisting of a conventional transistor and a Schottky-barrier diode is proposed which has a very short saturation time constant τs0. The measured τs0of the composite transistor is reduced to ∼10 to 50 percent of that of the original transistor and is 1 ns at best.Keywords
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