High-power antiguided laser array fabricated without the need for overgrowth

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Abstract
The fabrication of conventional semiconductor antiguided laser array structures involves etching of the array profile followed by an overgrowth step. In this letter, we report the fabrication of an antiguided laser array using zinc diffusion induced intermixing of a superlattice to create the necessary index step. The technique was used to fabricate a five-element, 10-/spl mu/m center, antiguided laser array operating at 0.860 /spl mu/m. The device operated at 1.2/spl times/ diffraction limit to 3-W pulsed (total, both facets) and 1.6-W quasi-continuous-wave (CW) (100-/spl mu/s pulses; total, both facets).