In situ REM study of monatomic step behaviour on Si(111) surface during sublimation
- 1 April 1993
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 48 (4) , 377-380
- https://doi.org/10.1016/0304-3991(93)90115-e
Abstract
No abstract availableKeywords
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- Direct REM observation of structural processes on clean silicon surfaces during sublimation, phase transition and epitaxyApplied Surface Science, 1992
- DC-Resistive-Heating-Induced Step Bunching on Vicinal Si (111)Japanese Journal of Applied Physics, 1990
- Transformations on clean Si(111) stepped surface during sublimationSurface Science, 1989
- Reflection electron microscopyJournal of Applied Crystallography, 1987