Calculation of energy‐dependent photoionization probabilities for valence electrons in diamond and silicon crystals
- 1 December 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 78 (2) , 681-688
- https://doi.org/10.1002/pssb.2220780229
Abstract
Photoionization probabilities for valence electrons in covalent semiconductor crystals are calculated in order to analyse the connection of the photoelectron spectra with the densities of valence electron states. A model is proposed and tested, which is based on solid state properties (adjusted sp3 tight binding functions and OPW functions are used for the initial and final states, respectively) and which yields purely energy‐dependent photoionization probabilities. Rather good results are obtained for C and Si; discrepancies occurring with Ge are discussed.This publication has 18 references indexed in Scilit:
- Partial density of valence states of amorphous and crystalline AgInand CuInPhysical Review B, 1974
- The Antisymmetric Gap and the Total Width of the Valence Band of Binary Compound CrystalsPhysica Status Solidi (b), 1974
- DETERMINATION OF DENSITIES OF VALENCE STATES BY THE COMBINED USE OF UV AND X-RAY PHOTOEMISSIONLe Journal de Physique Colloques, 1973
- X-Ray Photoelectron Study of the Valence Bands in Cuprous HalidesPhysical Review B, 1973
- X-Ray Photoemission Cross-Section Modulation in Diamond, Silicon, Germanium, Methane, Silane, and GermanePhysical Review B, 1973
- Berechnung der Zustandsdichte und der Röntgen‐K‐Emissionsbanden in GaAsAnnalen der Physik, 1973
- Ab InitioCalculation of the Electronic Structure and Optical Properties of Diamond Using the Discrete Variational MethodPhysical Review B, 1971
- New Set of Tetrahedral Covalent RadiiPhysical Review B, 1970
- Application of the Quantum-Defect Method to Optical Transitions Involving Deep Effective-Mass-Like Impurities in SemiconductorsPhysical Review B, 1969
- Band-Theoretic Model for the Photoelectric Effect in SiliconPhysical Review B, 1965